2SD129

SKU: 2SD129

2SD129 Transistor Silicon NPN CASE: TO66 MAKE: Toshiba

Product specifications

Weight	0.05 kg
Type	Transistor Silicon NPN
Case	TO66
Manufacturer	Toshiba
Vbr CBO	90
Vbr CEO	80
Max. PD (W)	25
Max. hFE	200
Min hFE	30
Ic Max. (A)	3.0
@Ic (test) (A)	1.0
Icbo Max. @Vcb Max. (A)	1.0m
Polarity	NPN
Derate Above 25°C	200m
Oper. Temp (°C) Max.	140
@VCE (V)	5.0
Pinout Equivalence Number	3-12
Surface Mounted Yes/No	NO
Maximum Collector Power Dissipation (Pc)	25 W
Maximum Collector-Base Voltage \|Vcb\|	90 V
Maximum Collector-Emitter Voltage \|Vce\|	80 V
Maximum Emitter-Base Voltage \|Veb\|	10 V
Maximum Collector Current \|Ic max\|	3 A
Max. Operating Junction Temperature (Tj)	125 °C
Transition Frequency (ft):	1 MHz
Forward Current Transfer Ratio (hFE), MIN	30
SKU	584729

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