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2SD1301
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2SD1301

SKU: 2SD1301
2SD1301 Transistor Silicon NPN CASE: TO3 MAKE: Matsushita Electronics
Datasheet
2SD1301 Datasheet
Product specifications
Type Transistor Silicon NPN
Case TO3
Manufacturer Matsushita Electronics
Vbr CBO 1.5k
Vbr CEO 1.5k
Max. PD (W) 45
Max. hFE 12
Min hFE 3.0
Ic Max. (A) 2.0
@Ic (test) (A) 1.0
Icbo Max. @Vcb Max. (A) 1.0m
Polarity NPN
Tr Max. (s) 6.0u
Derate Above 25°C 428m
Oper. Temp (°C) Max. 135
@VCE (V) 10
Pinout Equivalence Number 3-14
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 45 W
Maximum Collector-Base Voltage |Vcb| 1500 V
Maximum Collector Current |Ic max| 2 A
Max. Operating Junction Temperature (Tj) 150 °C
Forward Current Transfer Ratio (hFE), MIN 15
SKU 345415
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