2SD1313

SKU: 2SD1313

2SD1313 Transistor Silicon NPN CASE: TO3PL MAKE: Toshiba

Price:

£16.79 Inc. VAT (£13.99 Ex. VAT)

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Datasheet

2SD1313 Datasheet

Product specifications

Weight	0.01 kg
Type	Transistor Silicon NPN
Case	TO3PL
Manufacturer	Toshiba
Vbr CBO	800
Vbr CEO	350
Max. PD (W)	200
Min hFE	15
Ic Max. (A)	25
@Ic (test) (A)	1.0
Icbo Max. @Vcb Max. (A)	1.0m
Polarity	NPN
Tr Max. (s)	0.8u
Trans. Freq (Hz) Min.	6.0M
Oper. Temp (°C) Max.	140
@VCE (V)	5.0
Pinout Equivalence Number	3-15
Surface Mounted Yes/No	NO
Maximum Collector Power Dissipation (Pc)	200 W
Maximum Collector-Base Voltage \|Vcb\|	800 V
Maximum Collector-Emitter Voltage \|Vce\|	350 V
Maximum Emitter-Base Voltage \|Veb\|	7 V
Maximum Collector Current \|Ic max\|	25 A
Max. Operating Junction Temperature (Tj)	150 °C
Collector Capacitance (Cc)	170 pF
Transition Frequency (ft):	6 MHz
Forward Current Transfer Ratio (hFE), MIN	6
SKU	82572

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