2SD1314

SKU: 2SD1314

2SD1314 Transistor Silicon NPN CASE: SOT430 MAKE: Toshiba

Price:

£23.99 Inc. VAT (£19.99 Ex. VAT)

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Datasheet

2SD1314 Datasheet

Product specifications

Weight	0.01 kg
Type	Transistor Silicon NPN
Case	SOT430
Manufacturer	Toshiba
Vbr CEO	450
Max. PD (W)	150
Min hFE	100
Ic Max. (A)	15
@Ic (test) (A)	15
Icbo Max. @Vcb Max. (A)	1.0m
Mat.	Silicon Logic
Polarity	NPN
@VCE (test)	5.0
Oper. Temp (°C) Max.	150
Pinout Equivalence Number	N/A
Surface Mounted Yes/No	NO
Maximum Collector Power Dissipation (Pc)	150 W
Maximum Collector-Base Voltage \|Vcb\|	600 V
Maximum Collector-Emitter Voltage \|Vce\|	450 V
Maximum Emitter-Base Voltage \|Veb\|	6 V
Maximum Collector Current \|Ic max\|	15 A
Max. Operating Junction Temperature (Tj)	150 °C
Collector Capacitance (Cc)	150 pF
Forward Current Transfer Ratio (hFE), MIN	100
SKU	345417

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