2SD1316

2SD1316

SKU: 2SD1316
2SD1316 Transistor Silicon NPN CASE: TO262 MAKE: Matsushita Electronics
Product specifications
Type Transistor Silicon NPN
Case TO262
Manufacturer Matsushita Electronics
Vbr CEO 30
Max. PD (W) 35
Max. hFE 10k
Min hFE 1.0k
Ic Max. (A) 2.0
@Ic (test) (A) 2.0
Icbo Max. @Vcb Max. (A) 100u
Mat. Silicon Logic
Polarity NPN
Derate Above 25°C 280m
@VCE (test) 4.0
Oper. Temp (°C) Max. 150
Pinout Equivalence Number 3-15
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 35 W
Maximum Collector-Base Voltage |Vcb| 25 V
Maximum Collector Current |Ic max| 5 A
Max. Operating Junction Temperature (Tj) 175 °C
Forward Current Transfer Ratio (hFE), MIN 1000
SKU 550660
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