2SD1319

SKU: 2SD1319

2SD1319 Transistor Silicon NPN CASE: TO251 MAKE: Matsushita Electronics

Product specifications

Weight	0.01 kg
Type	Transistor Silicon NPN
Case	TO251
Manufacturer	Matsushita Electronics
Vbr CEO	60
Max. PD (W)	35
Max. hFE	10k
Min hFE	1.0k
Ic Max. (A)	2.0
@Ic (test) (A)	2.0
Icbo Max. @Vcb Max. (A)	100u
Mat.	Silicon Logic
Polarity	NPN
Derate Above 25°C	280m
@VCE (test)	4.0
Oper. Temp (°C) Max.	150
Pinout Equivalence Number	3-15
Surface Mounted Yes/No	NO
Maximum Collector Power Dissipation (Pc)	35 W
Maximum Collector-Base Voltage \|Vcb\|	50 V
Maximum Collector Current \|Ic max\|	2 A
Max. Operating Junction Temperature (Tj)	150 °C
Forward Current Transfer Ratio (hFE), MIN	1000
SKU	761837

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