2SD1359

SKU: 2SD1359

2SD1359 Transistor Silicon NPN CASE: TO220 MAKE: Toshiba

Product specifications

Weight	0.01 kg
Type	Transistor Silicon NPN
Case	TO220
Manufacturer	Toshiba
Vbr CBO	60
Vbr CEO	60
Max. PD (W)	30
Max. hFE	15k
Min hFE	2.0k
Ic Max. (A)	7.0
@Ic (test) (A)	3.0
Icbo Max. @Vcb Max. (A)	100u
Polarity	NPN
Tr Max. (s)	800n
Derate Above 25°C	240m
Oper. Temp (°C) Max.	140
@VCE (V)	3.0
Pinout Equivalence Number	3-15
Surface Mounted Yes/No	NO
Maximum Collector Power Dissipation (Pc)	40 W
Maximum Collector-Base Voltage \|Vcb\|	60 V
Maximum Collector-Emitter Voltage \|Vce\|	60 V
Maximum Emitter-Base Voltage \|Veb\|	5 V
Maximum Collector Current \|Ic max\|	7 A
Max. Operating Junction Temperature (Tj)	150 °C
Forward Current Transfer Ratio (hFE), MIN	4000
SKU	761782

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