2SD136

SKU: 2SD136

2SD136 Transistor Silicon NPN CASE: TO3 MAKE: Fujitsu

Product specifications

Weight	0.01 kg
Type	Transistor Silicon NPN
Case	TO3
Manufacturer	Fujitsu
Vbr CBO	200
Vbr CEO	200
Max. PD (W)	4.0
Max. hFE	250
Min hFE	30
Ic Max. (A)	100m
@Ic (test) (A)	50m
Icbo Max. @Vcb Max. (A)	10m
Polarity	NPN
Derate Above 25°C	50m
Trans. Freq (Hz) Min.	25M
Oper. Temp (°C) Max.	140
@VCE (V)	10
Pinout Equivalence Number	N/A
Surface Mounted Yes/No	NO
Maximum Collector Power Dissipation (Pc)	4 W
Maximum Collector-Base Voltage \|Vcb\|	200 V
Maximum Collector-Emitter Voltage \|Vce\|	200 V
Maximum Emitter-Base Voltage \|Veb\|	3 V
Maximum Collector Current \|Ic max\|	0.1 A
Max. Operating Junction Temperature (Tj)	150 °C
Forward Current Transfer Ratio (hFE), MIN	30
SKU	761781

Back