2SD1360

SKU: 2SD1360

2SD1360 Transistor Silicon NPN CASE: TO220 MAKE: Toshiba

Product specifications

Weight	0.01 kg
Type	Transistor Silicon NPN
Case	TO220
Manufacturer	Toshiba
Vbr CBO	600
Vbr CEO	400
Max. PD (W)	25
Min hFE	600
Ic Max. (A)	6.0
@Ic (test) (A)	2.0
Icbo Max. @Vcb Max. (A)	500u
Polarity	NPN
Tr Max. (s)	1.0u
Derate Above 25°C	200m
Oper. Temp (°C) Max.	140
@VCE (V)	2.0
Pinout Equivalence Number	3-15
Surface Mounted Yes/No	NO
Maximum Collector Power Dissipation (Pc)	30 W
Maximum Collector-Base Voltage \|Vcb\|	600 V
Maximum Collector-Emitter Voltage \|Vce\|	400 V
Maximum Emitter-Base Voltage \|Veb\|	5 V
Maximum Collector Current \|Ic max\|	6 A
Max. Operating Junction Temperature (Tj)	150 °C
Collector Capacitance (Cc)	35 pF
Forward Current Transfer Ratio (hFE), MIN	800
SKU	761780

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