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2SD1362
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2SD1362

SKU: 2SD1362
2SD1362 Transistor Silicon NPN CASE: TO220 MAKE: Toshiba
Product specifications
Type Transistor Silicon NPN
Case TO220
Manufacturer Toshiba
Vbr CBO 100
Vbr CEO 80
Max. PD (W) 40
Max. hFE 240
Min hFE 70
Ic Max. (A) 7.0
@Ic (test) (A) 1.0
Icbo Max. @Vcb Max. (A) 5.0u
Polarity NPN
Tr Max. (s) 5.0u
Derate Above 25°C 320m
Oper. Temp (°C) Max. 140
@VCE (V) 1.0
Pinout Equivalence Number 3-15
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 40 W
Maximum Collector-Base Voltage |Vcb| 100 V
Maximum Collector-Emitter Voltage |Vce| 80 V
Maximum Emitter-Base Voltage |Veb| 5 V
Maximum Collector Current |Ic max| 7 A
Max. Operating Junction Temperature (Tj) 150 °C
Collector Capacitance (Cc) 250 pF
Transition Frequency (ft): 10 MHz
Forward Current Transfer Ratio (hFE), MIN 70
SKU 395535
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