2SD1369

SKU: 2SD1369

2SD1369 Transistor Silicon NPN CASE: TO220 MAKE: Toshiba

Product specifications

Weight	0.01 kg
Type	Transistor Silicon NPN
Case	TO220
Manufacturer	Toshiba
Vbr CBO	60
Vbr CEO	40
Max. PD (W)	20
Min hFE	2.0k
Ic Max. (A)	3.0
@Ic (test) (A)	1.0
Icbo Max. @Vcb Max. (A)	20u
Polarity	NPN
Tr Max. (s)	100n
Derate Above 25°C	160m
Oper. Temp (°C) Max.	140
@VCE (V)	2.0
Pinout Equivalence Number	3-15
Surface Mounted Yes/No	NO
Maximum Collector Power Dissipation (Pc)	25 W
Maximum Collector-Base Voltage \|Vcb\|	60 V
Maximum Collector-Emitter Voltage \|Vce\|	40 V
Maximum Collector Current \|Ic max\|	3 A
Max. Operating Junction Temperature (Tj)	150 °C
Forward Current Transfer Ratio (hFE), MIN	4000
SKU	761764

Back