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2SD137
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2SD137

SKU: 2SD137
2SD137 Transistor Silicon NPN CASE: TO3 MAKE: Fujitsu
Product specifications
Type Transistor Silicon NPN
Case TO3
Manufacturer Fujitsu
Vbr CBO 300
Vbr CEO 300
Max. PD (W) 4.0
Max. hFE 250
Min hFE 30
Ic Max. (A) 100m
@Ic (test) (A) 50m
Icbo Max. @Vcb Max. (A) 10m
Polarity NPN
Derate Above 25°C 50m
Trans. Freq (Hz) Min. 25M
Oper. Temp (°C) Max. 140
@VCE (V) 10
Pinout Equivalence Number N/A
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 4 W
Maximum Collector-Base Voltage |Vcb| 300 V
Maximum Collector-Emitter Voltage |Vce| 300 V
Maximum Emitter-Base Voltage |Veb| 3 V
Maximum Collector Current |Ic max| 0.1 A
Max. Operating Junction Temperature (Tj) 150 °C
Forward Current Transfer Ratio (hFE), MIN 30
SKU 761763
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