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2SD1376K
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2SD1376K

SKU: 2SD1376K
2SD1376K Transistor Silicon NPN CASE: SOT32 MAKE: Hitachi
Datasheet
2SD1376K Datasheet
Product specifications
Type Transistor Silicon NPN
Case SOT32
Manufacturer Hitachi
Vbr CEO 120
Max. PD (W) 20
Max. hFE 30k
Min hFE 2.0k
Ic Max. (A) 1.5
@Ic (test) (A) 1.0
Icbo Max. @Vcb Max. (A) 100u
Mat. Silicon Logic
Polarity NPN
Tr Max. (s) 500n
t(stor) Max. (S) 2.0u+
Derate Above 25°C .16
@VCE (test) 3.0
Oper. Temp (°C) Max. 150
Pinout Equivalence Number 3-10
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 20 W
Maximum Collector-Base Voltage |Vcb| 120 V
Maximum Collector-Emitter Voltage |Vce| 120 V
Maximum Emitter-Base Voltage |Veb| 7 V
Maximum Collector Current |Ic max| 1.5 A
Max. Operating Junction Temperature (Tj) 150 °C
Forward Current Transfer Ratio (hFE), MIN 15000
SKU 345435
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