| 2SD1385 Datasheet |
| Type | Transistor Silicon NPN | |
| Case | SOT33 | |
| Manufacturer | Matsushita Electronics | |
| Vbr CBO | 400 | |
| Vbr CEO | 400 | |
| Max. PD (W) | 1.0 | |
| Min hFE | 30 | |
| Ic Max. (A) | 100m | |
| @Ic (test) (A) | 30m | |
| Polarity | NPN | |
| Tr Max. (s) | 3.6u | |
| Derate Above 25°C | 8.0m | |
| Trans. Freq (Hz) Min. | 40M | |
| Oper. Temp (°C) Max. | 140 | |
| @VCE (V) | 5.0 | |
| Pinout Equivalence Number | 3-10 | |
| Surface Mounted Yes/No | NO | |
| Maximum Collector Power Dissipation (Pc) | 1.2 W | |
| Maximum Collector-Base Voltage |Vcb| | 400 V | |
| Maximum Collector Current |Ic max| | 0.1 A | |
| Max. Operating Junction Temperature (Tj) | 150 °C | |
| Transition Frequency (ft): | 40 MHz | |
| Forward Current Transfer Ratio (hFE), MIN | 45 | |
| SKU | 345445 | |