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2SD1406
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2SD1406

SKU: 2SD1406
2SD1406 Transistor Silicon NPN - CASE: TO220F MAKE: Toshiba
Price: £4.79
+ VAT 20% for UK purchases
£4.79
Qty
+ VAT 20% for UK purchases
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Datasheet
2SD1406 Datasheet
Product specifications
Case TO220F
Type Transistor Silicon NPN
Manufacturer Toshiba
Vbr CBO 60
Vbr CEO 60
Max. PD (W) 25
Max. hFE 300
Min hFE 60
Ic Max. (A) 3.0
@Ic (test) (A) 500m
Icbo Max. @Vcb Max. (A) 100u
Polarity NPN
Derate Above 25°C .20
Trans. Freq (Hz) Min. 3.0M
Oper. Temp (°C) Max. 140
@VCE (V) 5.0
Pinout Equivalence Number 3-15
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 25 W
Maximum Collector-Base Voltage |Vcb| 60 V
Maximum Collector-Emitter Voltage |Vce| 60 V
Maximum Emitter-Base Voltage |Veb| 7 V
Maximum Collector Current |Ic max| 3 A
Max. Operating Junction Temperature (Tj) 150 °C
Collector Capacitance (Cc) 70 pF
Transition Frequency (ft): 3 MHz
Forward Current Transfer Ratio (hFE), MIN 60
SKU 81438
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