2SD1409

SKU: 2SD1409

2SD1409 Transistor Silicon NPN CASE: TO220F MAKE: Toshiba

Price:

£5.75 Inc. VAT (£4.79 Ex. VAT)

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Datasheet

2SD1409 Datasheet

Product specifications

Weight	0.01 kg
Type	Transistor Silicon NPN
Case	TO220F
Manufacturer	Toshiba
Vbr CEO	400
Max. PD (W)	25
Min hFE	600
Ic Max. (A)	6.0
@Ic (test) (A)	2.0
Icbo Max. @Vcb Max. (A)	500u
Mat.	Silicon Logic
Polarity	NPN
Derate Above 25°C	200m
@VCE (test)	2.0
Oper. Temp (°C) Max.	150
Pinout Equivalence Number	3-15
Surface Mounted Yes/No	NO
Maximum Collector Power Dissipation (Pc)	25 W
Maximum Collector-Base Voltage \|Vcb\|	600 V
Maximum Collector-Emitter Voltage \|Vce\|	400 V
Maximum Emitter-Base Voltage \|Veb\|	5 V
Maximum Collector Current \|Ic max\|	6 A
Max. Operating Junction Temperature (Tj)	150 °C
Collector Capacitance (Cc)	35 pF
Forward Current Transfer Ratio (hFE), MIN	600
SKU	81440

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