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2SD1410
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2SD1410

SKU: 2SD1410
2SD1410 Transistor Silicon NPN CASE: SOT186 MAKE: Toshiba
Datasheet
2SD1410 Datasheet
Product specifications
Type Transistor Silicon NPN
Case SOT186
Manufacturer Toshiba
Vbr CEO 250
Max. PD (W) 25
Min hFE 2.0k
Ic Max. (A) 6.0
@Ic (test) (A) 2.0
Icbo Max. @Vcb Max. (A) 500u
Mat. Silicon Logic
Polarity NPN
Derate Above 25°C 200m
@VCE (test) 2.0
Oper. Temp (°C) Max. 150
Pinout Equivalence Number 3-15
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 25 W
Maximum Collector-Base Voltage |Vcb| 300 V
Maximum Collector-Emitter Voltage |Vce| 250 V
Maximum Emitter-Base Voltage |Veb| 5 V
Maximum Collector Current |Ic max| 6 A
Max. Operating Junction Temperature (Tj) 150 °C
Collector Capacitance (Cc) 35 pF
Forward Current Transfer Ratio (hFE), MIN 4000
SKU 345452
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