2SD1411

SKU: 2SD1411

2SD1411 Transistor Silicon NPN CASE: TO220F MAKE: Toshiba

Price:

£23.99 Inc. VAT (£19.99 Ex. VAT)

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Datasheet

2SD1411 Datasheet

Product specifications

Weight	0.01 kg
Equivalent	2SD1411Y
Type	Transistor Silicon NPN
Case	TO220F
Manufacturer	Toshiba
Vbr CBO	100
Vbr CEO	80
Max. PD (W)	30
Max. hFE	240
Min hFE	70
Ic Max. (A)	7.0
@Ic (test) (A)	1.0
Icbo Max. @Vcb Max. (A)	5.0u
Polarity	NPN
Tr Max. (s)	5.0u
Derate Above 25°C	240m
Oper. Temp (°C) Max.	140
@VCE (V)	1.0
Pinout Equivalence Number	3-15
Surface Mounted Yes/No	NO
Maximum Collector Power Dissipation (Pc)	30 W
Maximum Collector-Base Voltage \|Vcb\|	100 V
Maximum Collector-Emitter Voltage \|Vce\|	80 V
Maximum Emitter-Base Voltage \|Veb\|	5 V
Maximum Collector Current \|Ic max\|	7 A
Max. Operating Junction Temperature (Tj)	150 °C
Collector Capacitance (Cc)	250 pF
Transition Frequency (ft):	10 MHz
Forward Current Transfer Ratio (hFE), MIN	70
SKU	81441

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