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2SD1412
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2SD1412

SKU: 2SD1412
2SD1412 Transistor Silicon NPN CASE: TO220F MAKE: Toshiba
Datasheet
2SD1412 Datasheet
Product specifications
Type Transistor Silicon NPN
Case TO220F
Manufacturer Toshiba
Vbr CBO 70
Vbr CEO 50
Max. PD (W) 30
Max. hFE 240
Min hFE 70
Ic Max. (A) 7.0
@Ic (test) (A) 1.0
Icbo Max. @Vcb Max. (A) 30u
Polarity NPN
Tr Max. (s) 30u
Derate Above 25°C 240m
Oper. Temp (°C) Max. 140
@VCE (V) 1.0
Pinout Equivalence Number 3-15
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 30 W
Maximum Collector-Base Voltage |Vcb| 70 V
Maximum Collector-Emitter Voltage |Vce| 50 V
Maximum Emitter-Base Voltage |Veb| 5 V
Maximum Collector Current |Ic max| 7 A
Max. Operating Junction Temperature (Tj) 150 °C
Collector Capacitance (Cc) 250 pF
Transition Frequency (ft): 10 MHz
Forward Current Transfer Ratio (hFE), MIN 70
SKU 115406
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