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2SD1412A
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2SD1412A

SKU: 2SD1412A
2SD1412A Transistor Silicon NPN CASE: SOT186A MAKE: Toshiba
Datasheet
2SD1412A Datasheet
Product specifications
Type Transistor Silicon NPN
Case SOT186A
Manufacturer Toshiba
Polarity NPN
Maximum Collector Power Dissipation (Pc) 30 W
Maximum Collector-Base Voltage |Vcb| 70 V
Maximum Collector-Emitter Voltage |Vce| 50 V
Maximum Emitter-Base Voltage |Veb| 5 V
Maximum Collector Current |Ic max| 7 A
Max. Operating Junction Temperature (Tj) 150 °C
Collector Capacitance (Cc) 250 pF
Transition Frequency (ft): 10 MHz
Forward Current Transfer Ratio (hFE), MIN 70
SKU 345455
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