Weight |
0.01 kg
|
Type |
Transistor Silicon NPN |
Manufacturer |
Toshiba |
Case |
TO220F |
Vbr CEO |
100 |
Max. PD (W) |
30 |
Max. hFE |
15k |
Min hFE |
2.0k |
Ic Max. (A) |
7.0 |
@Ic (test) (A) |
3.0 |
Icbo Max. @Vcb Max. (A) |
100u |
Mat. |
Silicon Logic |
Polarity |
NPN |
Derate Above 25°C |
240m |
@VCE (test) |
3.0 |
Oper. Temp (°C) Max. |
150 |
Pinout Equivalence Number |
3-15 |
Surface Mounted Yes/No |
NO |
Maximum Collector Power Dissipation (Pc) |
30 W |
Maximum Collector-Base Voltage |Vcb| |
100 V |
Maximum Collector-Emitter Voltage |Vce| |
100 V |
Maximum Emitter-Base Voltage |Veb| |
5 V |
Maximum Collector Current |Ic max| |
7 A |
Max. Operating Junction Temperature (Tj) |
150 °C |
Forward Current Transfer Ratio (hFE), MIN |
4000 |
SKU |
17238 |