2SD1416

SKU: 2SD1416

2SD1416 Transistor Silicon NPN CASE: SOT186 MAKE: Toshiba

Product specifications

Weight	0.01 kg
Type	Transistor Silicon NPN
Case	SOT186
Manufacturer	Toshiba
Vbr CEO	80
Max. PD (W)	30
Max. hFE	15k
Min hFE	2.0k
Ic Max. (A)	7.0
@Ic (test) (A)	3.0
Icbo Max. @Vcb Max. (A)	100u
Mat.	Silicon Logic
Polarity	NPN
Derate Above 25°C	240m
@VCE (test)	3.0
Oper. Temp (°C) Max.	150
Pinout Equivalence Number	3-15
Surface Mounted Yes/No	NO
Maximum Collector Power Dissipation (Pc)	30 W
Maximum Collector-Base Voltage \|Vcb\|	80 V
Maximum Collector-Emitter Voltage \|Vce\|	80 V
Maximum Emitter-Base Voltage \|Veb\|	5 V
Maximum Collector Current \|Ic max\|	7 A
Max. Operating Junction Temperature (Tj)	150 °C
Forward Current Transfer Ratio (hFE), MIN	4000
SKU	585416

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