| Weight |
0.01 kg
|
| Type |
Transistor Silicon NPN |
| Case |
TO3PL |
| Manufacturer |
Toshiba |
| Vbr CBO |
1.5k |
| Vbr CEO |
600 |
| Max. PD (W) |
80 |
| Min hFE |
8.0 |
| Ic Max. (A) |
3.5 |
| @Ic (test) (A) |
500m |
| Icbo Max. @Vcb Max. (A) |
100u |
| Polarity |
NPN |
| Tr Max. (s) |
1.0u |
| Derate Above 25°C |
690m |
| Trans. Freq (Hz) Min. |
3.0M |
| Oper. Temp (°C) Max. |
140 |
| @VCE (V) |
5.0 |
| Pinout Equivalence Number |
3-15 |
| Surface Mounted Yes/No |
NO |
| Maximum Collector Power Dissipation (Pc) |
80 W |
| Maximum Collector-Base Voltage |Vcb| |
1500 V |
| Maximum Collector-Emitter Voltage |Vce| |
600 V |
| Maximum Emitter-Base Voltage |Veb| |
5 V |
| Maximum Collector Current |Ic max| |
3.5 A |
| Max. Operating Junction Temperature (Tj) |
150 °C |
| Collector Capacitance (Cc) |
95 pF |
| Transition Frequency (ft): |
3 MHz |
| Forward Current Transfer Ratio (hFE), MIN |
8 |
| SKU |
20784 |