The website uses cookies to understand site performance and process orders. We and our advertising partners also process personal data to deliver personalized and non-personalized advertising. By clicking OK, you explicitly consent to our tracking technologies and the processing of your data for ads personalization and conversion tracking. Click to learn more or change settings. 
    
2SD1449

2SD1449

SKU: 2SD1449
2SD1449 Transistor Silicon NPN CASE: SOT33 MAKE: Matsushita Electronics
Datasheet
2SD1449 Datasheet
Product specifications
Type Transistor Silicon NPN
Case SOT33
Manufacturer Matsushita Electronics
Vbr CBO 120
Vbr CEO 120
Max. PD (W) 300m
Derate (Amb) (W/°C) 3.0m
hfe 700=
Ic Max. (A) 2.0m
Icbo Max. @Vcb Max. (A) 100n
Polarity NPN
@VCE (test) (V) 5.0
Oper. Temp (°C) Max. 125
@Ic (A) 2.0m
Pinout Equivalence Number 3-10
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 0.3 W
Maximum Collector-Base Voltage |Vcb| 120 V
Maximum Collector Current |Ic max| 0.02 A
Max. Operating Junction Temperature (Tj) 150 °C
Forward Current Transfer Ratio (hFE), MIN 20
SKU 761699
Back