2SD1460

SKU: 2SD1460

2SD1460 Transistor Silicon NPN CASE: TO3 MAKE: Toshiba

Datasheet

2SD1460 Datasheet

Product specifications

Weight	0.01 kg
Type	Transistor Silicon NPN
Case	TO3
Manufacturer	Toshiba
Vbr CEO	100
Max. PD (W)	200
Min hFE	1.0k
Ic Max. (A)	30
@Ic (test) (A)	20
Icbo Max. @Vcb Max. (A)	100u
Mat.	Silicon Logic
Polarity	NPN
Derate Above 25°C	1.6
Trans. Freq (Hz) Min.	10M
@VCE (test)	5.0
Oper. Temp (°C) Max.	150
Pinout Equivalence Number	3-14
Surface Mounted Yes/No	NO
Maximum Collector Power Dissipation (Pc)	200 W
Maximum Collector-Base Voltage \|Vcb\|	100 V
Maximum Collector-Emitter Voltage \|Vce\|	100 V
Maximum Emitter-Base Voltage \|Veb\|	5 V
Maximum Collector Current \|Ic max\|	30 A
Max. Operating Junction Temperature (Tj)	150 °C
Collector Capacitance (Cc)	500 pF
Transition Frequency (ft):	10 MHz
Forward Current Transfer Ratio (hFE), MIN	3000
SKU	345476

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