| 2SD1486 Datasheet |
| Type | Transistor Silicon NPN | |
| Case | TO247 | |
| Manufacturer | Matsushita Electronics | |
| Vbr CBO | 120 | |
| Vbr CEO | 120 | |
| Max. PD (W) | 70 | |
| Max. hFE | 200 | |
| Min hFE | 40 | |
| Ic Max. (A) | 6.0 | |
| @Ic (test) (A) | 1.0 | |
| Icbo Max. @Vcb Max. (A) | 50u | |
| Polarity | NPN | |
| Derate Above 25°C | 560m | |
| Trans. Freq (Hz) Min. | 20M | |
| Oper. Temp (°C) Max. | 140 | |
| @VCE (V) | 5.0 | |
| Pinout Equivalence Number | 3-15 | |
| Surface Mounted Yes/No | NO | |
| Maximum Collector Power Dissipation (Pc) | 70 W | |
| Maximum Collector-Base Voltage |Vcb| | 120 V | |
| Maximum Collector Current |Ic max| | 6 A | |
| Max. Operating Junction Temperature (Tj) | 150 °C | |
| Transition Frequency (ft): | 20 MHz | |
| Forward Current Transfer Ratio (hFE), MIN | 80 | |
| SKU | 115410 | |