| 2SD1496 Datasheet |
| Type | Transistor Silicon NPN | |
| Case | TO218 | |
| Manufacturer | Hitachi | |
| Vbr CBO | 1.5k | |
| Vbr CEO | 600 | |
| Max. PD (W) | 20 | |
| t(f) Max. (S) | 2.3u | |
| Ic Max. (A) | 5.0 | |
| Polarity | NPN | |
| Derate Above 25°C | .16 | |
| Oper. Temp (°C) Max. | 140 | |
| Pinout Equivalence Number | 3-15 | |
| Surface Mounted Yes/No | NO | |
| Maximum Collector Power Dissipation (Pc) | 50 W | |
| Maximum Collector-Base Voltage |Vcb| | 1500 V | |
| Maximum Collector Current |Ic max| | 5 A | |
| Max. Operating Junction Temperature (Tj) | 150 °C | |
| Forward Current Transfer Ratio (hFE), MIN | 12 | |
| SKU | 115412 | |