2SD1518

SKU: 2SD1518

2SD1518 Transistor Silicon NPN CASE: TO3P MAKE: Toshiba

Datasheet

2SD1518 Datasheet

Product specifications

Weight	0.01 kg
Type	Transistor Silicon NPN
Case	TO3P
Manufacturer	Toshiba
Vbr CBO	900
Vbr CEO	400
Max. PD (W)	50
t(f) Max. (S)	.50u
Min hFE	8.0
Ic Max. (A)	6.0
@Ic (test) (A)	10m
Icbo Max. @Vcb Max. (A)	1.0m
Polarity	NPN
Derate Above 25°C	.40
Trans. Freq (Hz) Min.	5.0M
Oper. Temp (°C) Max.	140
@VCE (V)	5.0
Pinout Equivalence Number	3-15
Surface Mounted Yes/No	NO
Maximum Collector Power Dissipation (Pc)	50 W
Maximum Collector-Base Voltage \|Vcb\|	900 V
Maximum Collector-Emitter Voltage \|Vce\|	400 V
Maximum Collector Current \|Ic max\|	6 A
Max. Operating Junction Temperature (Tj)	150 °C
Collector Capacitance (Cc)	75 pF
Transition Frequency (ft):	5 MHz
Forward Current Transfer Ratio (hFE), MIN	10
SKU	345505

Back