2SD1519

SKU: 2SD1519

2SD1519 Transistor Silicon NPN CASE: TO126 MAKE: Toshiba

Datasheet

2SD1519 Datasheet

Product specifications

Weight	0.01 kg
Type	Transistor Silicon NPN
Case	TO126
Manufacturer	Toshiba
Vbr CBO	1.4k
Vbr CEO	600
Max. PD (W)	80
t(f) Max. (S)	1.0u
Min hFE	8.0
Ic Max. (A)	10
@Ic (test) (A)	2.0
Icbo Max. @Vcb Max. (A)	10u
Polarity	NPN
Derate Above 25°C	.64
Trans. Freq (Hz) Min.	3.0M
Oper. Temp (°C) Max.	140
@VCE (V)	5.0
Pinout Equivalence Number	3-15
Surface Mounted Yes/No	NO
Maximum Collector Power Dissipation (Pc)	80 W
Maximum Collector-Base Voltage \|Vcb\|	1400 V
Maximum Collector Current \|Ic max\|	10 A
Max. Operating Junction Temperature (Tj)	150 °C
Forward Current Transfer Ratio (hFE), MIN	15
SKU	345506

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