2SD157

SKU: 2SD157

2SD157 Transistor Silicon NPN CASE: TO66 MAKE: Fujitsu

Product specifications

Weight	0.05 kg
Type	Transistor Silicon NPN
Case	TO66
Manufacturer	Fujitsu
Vbr CBO	300
Vbr CEO	300
Max. PD (W)	4.0
Max. hFE	250
Min hFE	20
Ic Max. (A)	100m
@Ic (test) (A)	50m
Icbo Max. @Vcb Max. (A)	10m
Polarity	NPN
R(sat) (Û)	100
Derate Above 25°C	50m
Trans. Freq (Hz) Min.	20M
Oper. Temp (°C) Max.	140
@VCE (V)	10
Pinout Equivalence Number	N/A
Surface Mounted Yes/No	NO
Maximum Collector Power Dissipation (Pc)	4 W
Maximum Collector-Base Voltage \|Vcb\|	300 V
Maximum Collector-Emitter Voltage \|Vce\|	300 V
Maximum Emitter-Base Voltage \|Veb\|	3 V
Maximum Collector Current \|Ic max\|	0.1 A
Max. Operating Junction Temperature (Tj)	125 °C
Transition Frequency (ft):	10 MHz
Forward Current Transfer Ratio (hFE), MIN	20
SKU	761613

Back