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2SD160
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2SD160

SKU: 2SD160
2SD160 Transistor Silicon NPN CASE: TO8 MAKE: Fujitsu
Product specifications
Type Transistor Silicon NPN
Case TO8
Manufacturer Fujitsu
Vbr CBO 100
Vbr CEO 55
Max. PD (W) 25
t(f) Max. (S) 3.0u-
Min hFE 50-
Ic Max. (A) 1.5
@Ic (test) (A) 750m
Icbo Max. @Vcb Max. (A) 10u
Polarity NPN
Tr Max. (s) 1.0u-
R(sat) (Û) 1.0
Derate Above 25°C 166m
Oper. Temp (°C) Max. 175
@VCE (V) 10
Pinout Equivalence Number 3-12
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 25 W
Maximum Collector-Base Voltage |Vcb| 100 V
Maximum Collector-Emitter Voltage |Vce| 60 V
Maximum Emitter-Base Voltage |Veb| 8 V
Maximum Collector Current |Ic max| 1.5 A
Max. Operating Junction Temperature (Tj) 150 °C
Forward Current Transfer Ratio (hFE), MIN 20
SKU 540195
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