2SD1606

SKU: 2SD1606

2SD1606 Transistor Silicon NPN CASE: TO220 MAKE: Hitachi

Datasheet

2SD1606 Datasheet

Product specifications

Weight	0.01 kg
Type	Transistor Silicon NPN
Case	TO220
Manufacturer	Hitachi
Vbr CBO	120
Vbr CEO	120
Max. PD (W)	40
t(f) Max. (S)	2.0u-+
Max. hFE	20k
Min hFE	1k
Ic Max. (A)	6.0
@Ic (test) (A)	0
Icbo Max. @Vcb Max. (A)	100u
Polarity	NPN
Tr Max. (s)	0.6u-
Oper. Temp (°C) Max.	140
@VCE (V)	120i
Pinout Equivalence Number	3-15
Surface Mounted Yes/No	NO
Maximum Collector Power Dissipation (Pc)	40 W
Maximum Collector-Base Voltage \|Vcb\|	120 V
Maximum Collector-Emitter Voltage \|Vce\|	120 V
Maximum Emitter-Base Voltage \|Veb\|	7 V
Maximum Collector Current \|Ic max\|	6 A
Max. Operating Junction Temperature (Tj)	150 °C
Forward Current Transfer Ratio (hFE), MIN	15000
SKU	345545

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