The website uses cookies to understand site performance and process orders. We and our advertising partners also process personal data to deliver personalized and non-personalized advertising. By clicking OK, you explicitly consent to our tracking technologies and the processing of your data for ads personalization and conversion tracking. Click to learn more or change settings. 
    
2SD1610
View detailed images (13)

2SD1610

SKU: 2SD1610
2SD1610 Transistor Silicon NPN CASE: TO126 MAKE: Hitachi
Price:
£5.75 Inc. VAT (£4.79 Ex. VAT)
£5.75 Inc. VAT (£4.79 Ex. VAT)
Qty
  • 15 pieces in 1-2 Days
  • More pieces shipped in 14 days
?
Datasheet
2SD1610 Datasheet
Product specifications
Type Transistor Silicon NPN
Case TO126
Manufacturer Hitachi
Vbr CBO 200
Vbr CEO 200
Max. PD (W) 1.3
Max. hFE 320
Min hFE 60
Ic Max. (A) 100m
@Ic (test) (A) 10m
Icbo Max. @Vcb Max. (A) 10u
Polarity NPN
Trans. Freq (Hz) Min. 140M
Oper. Temp (°C) Max. 150
@VCE (V) 5.0
Pinout Equivalence Number 3-10
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 1.25 W
Maximum Collector-Base Voltage |Vcb| 200 V
Maximum Collector-Emitter Voltage |Vce| 200 V
Maximum Emitter-Base Voltage |Veb| 5 V
Maximum Collector Current |Ic max| 0.1 A
Max. Operating Junction Temperature (Tj) 150 °C
Collector Capacitance (Cc) 3.8 pF
Transition Frequency (ft): 140 MHz
Forward Current Transfer Ratio (hFE), MIN 60
SKU 81473
Back