2SD170A

SKU: 2SD170A

2SD170A Transistor Germanium NPN CASE: TO1 MAKE: Hitachi

Product specifications

Weight	0.01 kg
Equivalent	2SD170
Type	Transistor Germanium NPN
Case	TO1
Manufacturer	Hitachi
Vbr CBO	32
Vbr CEO	25
Max. PD (W)	600m
Derate (Amb) (W/°C)	10m
hfe	70
Ic Max. (A)	500m
Icbo Max. @Vcb Max. (A)	5.0m
Polarity	NPN
@VCE (test) (V)	1.0
Oper. Temp (°C) Max.	100
@Ic (A)	150m
Pinout Equivalence Number	3-12
Surface Mounted Yes/No	NO
Maximum Collector Power Dissipation (Pc)	0.2 W
Maximum Collector-Base Voltage \|Vcb\|	32 V
Maximum Collector-Emitter Voltage \|Vce\|	25 V
Maximum Emitter-Base Voltage \|Veb\|	12 V
Maximum Collector Current \|Ic max\|	0.5 A
Max. Operating Junction Temperature (Tj)	150 °C
Transition Frequency (ft):	10 MHz
Forward Current Transfer Ratio (hFE), MIN	60
SKU	543125

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