The website uses cookies to understand site performance and process orders. We and our advertising partners also process personal data to deliver personalized and non-personalized advertising. By clicking OK, you explicitly consent to our tracking technologies and the processing of your data for ads personalization and conversion tracking. Click to learn more or change settings. 
    
2SD171-2
View detailed images (13)

2SD171-2

SKU: 2SD171-2
2SD171-2 Transistor Silicon NPN CASE: TO3 MAKE: Sony
Product specifications
Type Transistor Silicon NPN
Case TO3
Manufacturer Sony
Vbr CBO 600
Vbr CEO 200
Max. PD (W) 125
Max. hFE 200
Min hFE 30
Ic Max. (A) 3.5
@Ic (test) (A) 1.0
Icbo Max. @Vcb Max. (A) 100u
Polarity NPN
R(sat) (Û) 1.0
Derate Above 25°C 1.0
Oper. Temp (°C) Max. 140
@VCE (V) 3.0
Pinout Equivalence Number 3-14
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 125 W
Maximum Collector-Base Voltage |Vcb| 600 V
Maximum Collector-Emitter Voltage |Vce| 200 V
Maximum Collector Current |Ic max| 3.5 A
Max. Operating Junction Temperature (Tj) 150 °C
Collector Capacitance (Cc) 285 pF
Transition Frequency (ft): 2.5 MHz
Forward Current Transfer Ratio (hFE), MIN 30
SKU 368890
Back