The website uses cookies to understand site performance and process orders. We and our advertising partners also process personal data to deliver personalized and non-personalized advertising. By clicking OK, you explicitly consent to our tracking technologies and the processing of your data for ads personalization and conversion tracking. Click to learn more or change settings. 
    
2SD175M
View detailed images (13)

2SD175M

SKU: 2SD175M
2SD175M Transistor Silicon NPN CASE: TO3 MAKE: Fujitsu
Product specifications
Type Transistor Silicon NPN
Case TO3
Manufacturer Fujitsu
Vbr CBO 100
Vbr CEO 60
Max. PD (W) 50
Max. hFE 45
Min hFE 15
Ic Max. (A) 5.0
@Ic (test) (A) 5.0
Icbo Max. @Vcb Max. (A) 20u
Polarity NPN
R(sat) (Û) 300m
Derate Above 25°C 333m
Trans. Freq (Hz) Min. 500k
Oper. Temp (°C) Max. 175
@VCE (V) 4.0
Pinout Equivalence Number 3-14
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 50 W
Maximum Collector-Base Voltage |Vcb| 100 V
Maximum Collector-Emitter Voltage |Vce| 60 V
Maximum Emitter-Base Voltage |Veb| 6 V
Maximum Collector Current |Ic max| 5 A
Max. Operating Junction Temperature (Tj) 150 °C
Transition Frequency (ft): 0.5 MHz
Forward Current Transfer Ratio (hFE), MIN 15
SKU 540401
Back