| 2SD1779 Datasheet |
| Type | Transistor Silicon NPN | |
| Case | SOT33 | |
| Manufacturer | NEC | |
| Vbr CBO | 60 | |
| Vbr CEO | 60 | |
| Max. PD (W) | 1.0 | |
| t(f) Max. (S) | 1.2u | |
| Max. hFE | 3.2k | |
| Min hFE | 800 | |
| Ic Max. (A) | 2.0 | |
| @Ic (test) (A) | 1.0 | |
| Icbo Max. @Vcb Max. (A) | 100n | |
| Polarity | NPN | |
| Tr Max. (s) | 800n | |
| Oper. Temp (°C) Max. | 140 | |
| @VCE (V) | 5.0 | |
| Pinout Equivalence Number | 3-10 | |
| Surface Mounted Yes/No | NO | |
| Maximum Collector Power Dissipation (Pc) | 1 W | |
| Maximum Collector-Base Voltage |Vcb| | 60 V | |
| Maximum Collector Current |Ic max| | 2 A | |
| Max. Operating Junction Temperature (Tj) | 150 °C | |
| Forward Current Transfer Ratio (hFE), MIN | 1500 | |
| SKU | 345643 | |