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2SD1779
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2SD1779

SKU: 2SD1779
2SD1779 Transistor Silicon NPN CASE: SOT33 MAKE: NEC
Datasheet
2SD1779 Datasheet
Product specifications
Type Transistor Silicon NPN
Case SOT33
Manufacturer NEC
Vbr CBO 60
Vbr CEO 60
Max. PD (W) 1.0
t(f) Max. (S) 1.2u
Max. hFE 3.2k
Min hFE 800
Ic Max. (A) 2.0
@Ic (test) (A) 1.0
Icbo Max. @Vcb Max. (A) 100n
Polarity NPN
Tr Max. (s) 800n
Oper. Temp (°C) Max. 140
@VCE (V) 5.0
Pinout Equivalence Number 3-10
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 1 W
Maximum Collector-Base Voltage |Vcb| 60 V
Maximum Collector Current |Ic max| 2 A
Max. Operating Junction Temperature (Tj) 150 °C
Forward Current Transfer Ratio (hFE), MIN 1500
SKU 345643
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