The website uses cookies to understand site performance and process orders. We and our advertising partners also process personal data to deliver personalized and non-personalized advertising. By clicking OK, you explicitly consent to our tracking technologies and the processing of your data for ads personalization and conversion tracking. Click to learn more or change settings. 
    
2SD177M
View detailed images (13)

2SD177M

SKU: 2SD177M
2SD177M Transistor Silicon NPN CASE: TO3 MAKE: Fujitsu
Product specifications
Equivalent 2SD177
Type Transistor Silicon NPN
Case TO3
Manufacturer Fujitsu
Vbr CBO 120
Vbr CEO 70
Max. PD (W) 100
Max. hFE 45
Min hFE 15
Ic Max. (A) 10
@Ic (test) (A) 5.0
Icbo Max. @Vcb Max. (A) 20u
Polarity NPN
R(sat) (Û) 240m
Derate Above 25°C 666m
Trans. Freq (Hz) Min. 500k
Oper. Temp (°C) Max. 175
@VCE (V) 4.0
Pinout Equivalence Number 3-14
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 100 W
Maximum Collector-Base Voltage |Vcb| 120 V
Maximum Collector-Emitter Voltage |Vce| 70 V
Maximum Emitter-Base Voltage |Veb| 12 V
Maximum Collector Current |Ic max| 10 A
Max. Operating Junction Temperature (Tj) 150 °C
Transition Frequency (ft): 0.5 MHz
Forward Current Transfer Ratio (hFE), MIN 15
SKU 540402
Back