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2SD178
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2SD178

SKU: 2SD178
2SD178 Transistor Germanium NPN CASE: TO1 MAKE: Matsushita Electronics
Product specifications
Type Transistor Germanium NPN
Case TO1
Manufacturer Matsushita Electronics
Vbr CBO 20
Max. PD (W) 225m
Derate (Amb) (W/°C) 4.5m
hfe 90
Ic Max. (A) 300m
Icbo Max. @Vcb Max. (A) 27u
Polarity NPN
Trans. Freq (Hz) Min. 1.5M
@VCE (test) (V) .50i
Oper. Temp (°C) Max. 75
@Ic (A) 300m
Pinout Equivalence Number N/A
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 0.225 W
Maximum Collector-Base Voltage |Vcb| 20 V
Maximum Collector-Emitter Voltage |Vce| 20 V
Maximum Emitter-Base Voltage |Veb| 6 V
Maximum Collector Current |Ic max| 0.3 A
Max. Operating Junction Temperature (Tj) 125 °C
Transition Frequency (ft): 1 MHz
Forward Current Transfer Ratio (hFE), MIN 40
SKU 601486
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