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2SD1816T
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2SD1816T

SKU: 2SD1816T
2SD1816T Transistor Silicon NPN CASE: TO251 MAKE: Sanyo Semiconductor
Product specifications
Type Transistor Silicon NPN
Case TO251
Manufacturer Sanyo Semiconductor
Vbr CBO 120
Vbr CEO 100
Max. PD (W) 20
t(f) Max. (S) 50n-
Max. hFE 400
Min hFE 200
Ic Max. (A) 4.0
@Ic (test) (A) 500m
Icbo Max. @Vcb Max. (A) 1.0u
Polarity NPN
Trans. Freq (Hz) Min. 180M
Oper. Temp (°C) Max. 150
@VCE (V) 5.0
Pinout Equivalence Number 3-15
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 20 W
Maximum Collector-Base Voltage |Vcb| 120 V
Maximum Collector-Emitter Voltage |Vce| 100 V
Maximum Emitter-Base Voltage |Veb| 6 V
Maximum Collector Current |Ic max| 4 A
Max. Operating Junction Temperature (Tj) 150 °C
Collector Capacitance (Cc) 40 pF
Transition Frequency (ft): 180 MHz
Forward Current Transfer Ratio (hFE), MIN 200
SKU 761314
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