2SD183

SKU: 2SD183

2SD183 Transistor Silicon NPN CASE: TO8 MAKE: Fujitsu

Product specifications

Weight	0.01 kg
Type	Transistor Silicon NPN
Case	TO8
Manufacturer	Fujitsu
Vbr CBO	100
Vbr CEO	55
Max. PD (W)	10
Max. hFE	120
Min hFE	15
Ic Max. (A)	1.0
@Ic (test) (A)	750m
Icbo Max. @Vcb Max. (A)	15u
Polarity	NPN
Derate Above 25°C	66m
Trans. Freq (Hz) Min.	1.5M
Oper. Temp (°C) Max.	175
@VCE (V)	4.0
Pinout Equivalence Number	N/A
Surface Mounted Yes/No	NO
Maximum Collector Power Dissipation (Pc)	10 W
Maximum Collector-Base Voltage \|Vcb\|	100 V
Maximum Collector-Emitter Voltage \|Vce\|	55 V
Maximum Emitter-Base Voltage \|Veb\|	12 V
Maximum Collector Current \|Ic max\|	1 A
Max. Operating Junction Temperature (Tj)	125 °C
Transition Frequency (ft):	0.8 MHz
Forward Current Transfer Ratio (hFE), MIN	15
SKU	761270

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