2SD185

SKU: 2SD185

2SD185 Transistor Silicon NPN CASE: TO8 MAKE: Fujitsu

Product specifications

Weight	0.01 kg
Type	Transistor Silicon NPN
Case	TO8
Manufacturer	Fujitsu
Vbr CBO	100
Vbr CEO	55
Max. PD (W)	25
t(f) Max. (S)	3.0u-
Max. hFE	100
Min hFE	20
Ic Max. (A)	1.5
@Ic (test) (A)	750m
Icbo Max. @Vcb Max. (A)	10u
Polarity	NPN
Tr Max. (s)	1000n-
R(sat) (Û)	1.0
Derate Above 25°C	166m
Trans. Freq (Hz) Min.	1.5M
Oper. Temp (°C) Max.	175
@VCE (V)	4.0
Pinout Equivalence Number	N/A
Surface Mounted Yes/No	NO
Maximum Collector Power Dissipation (Pc)	25 W
Maximum Collector-Base Voltage \|Vcb\|	100 V
Maximum Collector-Emitter Voltage \|Vce\|	55 V
Maximum Emitter-Base Voltage \|Veb\|	12 V
Maximum Collector Current \|Ic max\|	1.5 A
Max. Operating Junction Temperature (Tj)	125 °C
Transition Frequency (ft):	0.8 MHz
Forward Current Transfer Ratio (hFE), MIN	20
SKU	540203

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