| 2SD1858 Datasheet |
| Type | Transistor Silicon NPN | |
| Case | TO126 | |
| Manufacturer | Sanyo Semiconductor | |
| Vbr CEO | 32 | |
| Max. PD (W) | 1.0 | |
| Max. hFE | 390 | |
| Min hFE | 82 | |
| Ic Max. (A) | 1.0 | |
| @Ic (test) (A) | 100m | |
| Polarity | NPN | |
| Trans. Freq (Hz) Min. | 150M | |
| @VCE (V) | 3.0 | |
| Pinout Equivalence Number | 3-10 | |
| Surface Mounted Yes/No | NO | |
| Maximum Collector Power Dissipation (Pc) | 1 W | |
| Maximum Collector-Base Voltage |Vcb| | 40 V | |
| Maximum Collector Current |Ic max| | 1 A | |
| Max. Operating Junction Temperature (Tj) | 150 °C | |
| Forward Current Transfer Ratio (hFE), MIN | 40 | |
| SKU | 81508 | |