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2SD189
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2SD189

SKU: 2SD189
2SD189 Transistor Silicon NPN CASE: TO3 MAKE: Matsushita Electronics
Product specifications
Type Transistor Silicon NPN
Case TO3
Manufacturer Matsushita Electronics
Vbr CBO 80
Vbr CEO 80
Max. PD (W) 50
Max. hFE 160
Min hFE 20
Ic Max. (A) 5.0
@Ic (test) (A) 4.0
Icbo Max. @Vcb Max. (A) 10m
Polarity NPN
R(sat) (Û) 400m
Derate Above 25°C 666m
Trans. Freq (Hz) Min. 40M
Oper. Temp (°C) Max. 140
@VCE (V) 4.0
Pinout Equivalence Number 3-14
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 50 W
Maximum Collector-Base Voltage |Vcb| 80 V
Maximum Collector-Emitter Voltage |Vce| 60 V
Maximum Emitter-Base Voltage |Veb| 5 V
Maximum Collector Current |Ic max| 5 A
Max. Operating Junction Temperature (Tj) 125 °C
Transition Frequency (ft): 20 MHz
Forward Current Transfer Ratio (hFE), MIN 20
SKU 549822
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