The website uses cookies to understand site performance and process orders. We and our advertising partners also process personal data to deliver personalized and non-personalized advertising. By clicking OK, you explicitly consent to our tracking technologies and the processing of your data for ads personalization and conversion tracking. Click to learn more or change settings. 
    
2SD1903R

2SD1903R

SKU: 2SD1903R
2SD1903R Transistor Silicon NPN CASE: TO262 MAKE: Sanyo Semiconductor
Product specifications
Equivalent 2SD1903
Type Transistor Silicon NPN
Case TO262
Manufacturer Sanyo Semiconductor
Vbr CBO 60
Vbr CEO 30
Max. PD (W) 30
t(f) Max. (S) 30n-
Max. hFE 200
Min hFE 100
Ic Max. (A) 8.0
@Ic (test) (A) 1.0
Icbo Max. @Vcb Max. (A) 100u
Polarity NPN
Tr Max. (s) 100n
Trans. Freq (Hz) Min. 120M
Oper. Temp (°C) Max. 150
@VCE (V) 2.0
Pinout Equivalence Number 3-10
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 3 W
Maximum Collector-Base Voltage |Vcb| 60 V
Maximum Collector-Emitter Voltage |Vce| 30 V
Maximum Emitter-Base Voltage |Veb| 6 V
Maximum Collector Current |Ic max| 8 A
Max. Operating Junction Temperature (Tj) 150 °C
Transition Frequency (ft): 120 MHz
Forward Current Transfer Ratio (hFE), MIN 100
SKU 572817
Back