2SD1907S

SKU: 2SD1907S

2SD1907S SemiConductor - Case: TO218 Make: SANJ

Product specifications

Weight	0.01 kg
Equivalent	2SD1907
Type	Transistor Silicon NPN
Case	TO218
Manufacturer	Sanyo Semiconductor
Vbr CBO	90
Vbr CEO	80
Max. PD (W)	40
t(f) Max. (S)	400n-
Max. hFE	280
Min hFE	140
Ic Max. (A)	7.0
@Ic (test) (A)	1.0
Icbo Max. @Vcb Max. (A)	100u
Polarity	NPN
Tr Max. (s)	100n
Trans. Freq (Hz) Min.	20M
Oper. Temp (°C) Max.	150
@VCE (V)	2.0
Pinout Equivalence Number	3-10
Surface Mounted Yes/No	NO
Maximum Collector Power Dissipation (Pc)	40 W
Maximum Collector-Base Voltage \|Vcb\|	90 V
Maximum Collector-Emitter Voltage \|Vce\|	80 V
Maximum Emitter-Base Voltage \|Veb\|	6 V
Maximum Collector Current \|Ic max\|	7 A
Max. Operating Junction Temperature (Tj)	150 °C
Transition Frequency (ft):	20 MHz
Forward Current Transfer Ratio (hFE), MIN	140
SKU	761210

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