The website uses cookies to understand site performance and process orders. We and our advertising partners also process personal data to deliver personalized and non-personalized advertising. By clicking OK, you explicitly consent to our tracking technologies and the processing of your data for ads personalization and conversion tracking. Click to learn more or change settings. 
    
2SD191
View detailed images (12)

2SD191

SKU: 2SD191
2SD191 Transistor Germanium NPN CASE: TO5 MAKE: Toshiba
Price:
£14.39 Inc. VAT (£11.99 Ex. VAT)
£14.39 Inc. VAT (£11.99 Ex. VAT)
Qty
  • 9 pieces in 1-2 Days
  • More pieces shipped in 14 days
?
Product specifications
Type Transistor Germanium NPN
Case TO5
Manufacturer Toshiba
Vbr CBO 30
Vbr CEO 25
Max. hFE 130
Min hFE 20
Ic Max. (A) .15
@Ic (test) (A) .05
Icbo Max. @Vcb Max. (A) 14n
Polarity NPN
Derate Above 25°C 2.9m
Oper. Temp (°C) Max. 75
@VCE (V) 1.0
Pinout Equivalence Number N/A
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 0.15 W
Maximum Collector-Base Voltage |Vcb| 30 V
Maximum Collector-Emitter Voltage |Vce| 24 V
Maximum Emitter-Base Voltage |Veb| 12 V
Maximum Collector Current |Ic max| 0.15 A
Max. Operating Junction Temperature (Tj) 150 °C
Forward Current Transfer Ratio (hFE), MIN 30
SKU 584730
Back