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2SD1910
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2SD1910

SKU: 2SD1910
2SD1910 Transistor Silicon NPN CASE: TO126 MAKE: Hitachi
Datasheet
2SD1910 Datasheet
Product specifications
Type Transistor Silicon NPN
Case TO126
Manufacturer Hitachi
Vbr CEO 1.5k
Max. PD (W) 40
t(f) Max. (S) 0.8u
Ic Max. (A) 3.0
Icbo Max. @Vcb Max. (A) 500u
Polarity NPN
Oper. Temp (°C) Max. 140
Pinout Equivalence Number N/A
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 40 W
Maximum Collector-Base Voltage |Vcb| 1500 V
Maximum Collector-Emitter Voltage |Vce| 600 V
Maximum Collector Current |Ic max| 3 A
Max. Operating Junction Temperature (Tj) 150 °C
Forward Current Transfer Ratio (hFE), MIN 12
SKU 761209
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