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2SD1914
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2SD1914

SKU: 2SD1914
2SD1914 Transistor Silicon NPN CASE: SOT82 MAKE: Sanyo Semiconductor
Datasheet
2SD1914 Datasheet
Product specifications
Type Transistor Silicon NPN
Case SOT82
Manufacturer Sanyo Semiconductor
Vbr CBO 100
Vbr CEO 80
Max. PD (W) 1.2
Min hFE 1.0k
Ic Max. (A) 2.0
@Ic (test) (A) 500m
Icbo Max. @Vcb Max. (A) 10u
Polarity NPN
Oper. Temp (°C) Max. 140
@VCE (V) 3.0
Pinout Equivalence Number 3-15
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 10 W
Maximum Collector-Base Voltage |Vcb| 100 V
Maximum Collector-Emitter Voltage |Vce| 80 V
Maximum Emitter-Base Voltage |Veb| 6 V
Maximum Collector Current |Ic max| 2 A
Max. Operating Junction Temperature (Tj) 150 °C
Forward Current Transfer Ratio (hFE), MIN 15000
SKU 345710
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