2SD1918

SKU: 2SD1918

2SD1918 Transistor Silicon NPN CASE: TO218 MAKE: Rohm Semiconductor

Datasheet

2SD1918 Datasheet

Product specifications

Weight	0.01 kg
Type	Transistor Silicon NPN
Case	TO218
Manufacturer	Rohm Semiconductor
Vbr CEO	160
Max. PD (W)	10
Max. hFE	270
Min hFE	56
Ic Max. (A)	1.5
@Ic (test) (A)	100m
Polarity	NPN
@VCE (V)	5.0
Pinout Equivalence Number	3-15
Surface Mounted Yes/No	YES
Maximum Collector Power Dissipation (Pc)	10 W
Maximum Collector-Base Voltage \|Vcb\|	160 V
Maximum Collector-Emitter Voltage \|Vce\|	160 V
Maximum Collector Current \|Ic max\|	1.5 A
Max. Operating Junction Temperature (Tj)	150 °C
Forward Current Transfer Ratio (hFE), MIN	30
SKU	345712

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